• DocumentCode
    3682899
  • Title

    HBT Model Scaling for Different Epi Materials and Geometries

  • Author

    Yingying Yang;Peter J. Zampardi;Kai Kwok

  • Author_Institution
    Skyworks Solutions, Inc., Newbury Park, CA, USA
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    In this paper, we extend our previous physics-based scalable models to include the scaling of transit time with base thickness and base doping based on a design of experiment (DOE) and to include the variation of ledge length as a device design parameter.
  • Keywords
    "Heterojunction bipolar transistors","Semiconductor process modeling","Mathematical model","Optical wavelength conversion","Current density","Inductors","Doping"
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductor Integrated Circuit Symposium (CSICS), 2015 IEEE
  • Type

    conf

  • DOI
    10.1109/CSICS.2015.7314506
  • Filename
    7314506
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3682899