• DocumentCode
    3688064
  • Title

    Gain and spontaneous emission characteristics of AlInN quantum well for deep ultraviolet emitters

  • Author

    Chee-Keong Tan;Nelson Tansu

  • Author_Institution
    Center for Photonics and Nanoelectronics, Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, PA 18015, USA
  • fYear
    2015
  • Firstpage
    577
  • Lastpage
    578
  • Abstract
    The gain and spontaneous emission characteristics of AlInN quantum well were calculated and analyzed using 6-band k.p method, and the finding revealed the potential of employing AlInN alloy as active region for deep ultraviolet emitter.
  • Keywords
    "Spontaneous emission","Aluminum gallium nitride","Wide band gap semiconductors","Stimulated emission","Light emitting diodes"
  • Publisher
    ieee
  • Conference_Titel
    Photonics Conference (IPC), 2015
  • ISSN
    1092-8081
  • Type

    conf

  • DOI
    10.1109/IPCon.2015.7323494
  • Filename
    7323494
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3688064