Title :
Trap enhanced Ge/Si photodiode formed by direct bonding: Towards NIR imaging system
Author :
N. Hattasan;N. Ye;B. Corbett
Author_Institution :
Tyndall National Institute, University College Cork, Lee Maltings, Dyke Parade, Ireland
Abstract :
We report a high efficiency normal incidence coupling Ge/Si photodiode formed by direct bonding. The devices exhibit high responsivity up to ~12A/W at 1.54μm and are suitable for imaging applications. We attribute the enhanced gain to surface trap states between Ge and Si.
Keywords :
"Silicon","Frequency measurement","Doping","Heterojunctions","Force","Annealing","Photodiodes"
Conference_Titel :
Photonics Conference (IPC), 2015
DOI :
10.1109/IPCon.2015.7323621
