DocumentCode :
3688184
Title :
Low-loss and high-speed electroabsorption modulator using InGaAsP/InAlGaAs multiple quantum wells
Author :
Sheng-An Yang;Po-Yun Wang;Cong-Long Chen;Yi-Jen Chiu
Author_Institution :
Department of Photonics, National Sun Yat-Sen University, Kaoshiung 80424, Taiwan R.O.C
fYear :
2015
Firstpage :
94
Lastpage :
95
Abstract :
A new quantum well, namely InGaAsP/InAlGaAs, is used for electroabsorption modulator. High band-offset ratio between well and barrier induces strong exciton effect, leading to low fiber-to-fiber loss of -8dB, >25dB extinction ratio, and >30GHz bandwidth.
Keywords :
"Optical fibers","Integrated optics","Optical modulation","Optical polarization","Quantum well devices","Frequency modulation"
Publisher :
ieee
Conference_Titel :
Photonics Conference (IPC), 2015
ISSN :
1092-8081
Type :
conf
DOI :
10.1109/IPCon.2015.7323631
Filename :
7323631
Link To Document :
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