Monolithic integration of high efficiency III-nitride LEDs and high breakdown Schottky barrier diodes

Integration of III-nitride light emitting diodes (LEDs) and Schottky barrier diodes (SBDs) have been proposed for various applications, such as electrostatic discharge (ESD) protection and alternating current-LEDs (AC-LEDs) with on-chip bridge rectifiers. Nevertheless, it is generally perceived that the dry etching-induced nitrogen vacancies in GaN lattice render a high surface concentration of defect donors, and lead to poor SBD performance in terms of high saturation current and very low breakdown voltage.