• DocumentCode
    3689019
  • Title

    Strain effect on mobility in nanowire MOSFETs down to 10nm width: Geometrical effects and piezoresistive model

  • Author

    J. Pelloux-Prayer;M. Cassé;F. Triozon;S. Barraud;Y.-M. Niquet;J.-L. Rouvière;O. Faynot;G. Reimbold

  • Author_Institution
    CEA, LETI, MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble, France |
  • fYear
    2015
  • Firstpage
    210
  • Lastpage
    213
  • Abstract
    The effect of strain on carrier mobility in triple gate FDSOI nanowires is experimentally investigated through piezoresistance measurements. We propose an empirical model based on simple assumptions that allows fitting the piezoresistive coefficients as well as the carrier mobility for various device geometries. We highlight an enhanced strain effect for Trigate nanowires with channel height below 11nm.
  • Keywords
    "Piezoresistance","Silicon","FinFETs","Strain","Semiconductor device modeling","Logic gates"
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference (ESSDERC), 2015 45th European
  • ISSN
    1930-8876
  • Print_ISBN
    978-1-4673-7133-9
  • Electronic_ISBN
    2378-6558
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2015.7324752
  • Filename
    7324752
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3689019