Title :
Common base four-finger InGaAs/InP DHBT with 535 GHz fmax
Author :
Niu Bin;Cheng Wei;Wang Yuan;Xie Zi-Li;Xie Jun-Ling;Lu Hai-Yan;Sun Yan;Chen Tang-Sheng
Author_Institution :
Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing, 210016, China
fDate :
7/1/2015 12:00:00 AM
Abstract :
A common base four-finger InGaAs/InP DHBT with 535 GHz fmax using 0.5μm emitter technology is fabricated. Multi-finger design was used to increase input current. Common base configuration was compared with common emitter configuration, and demonstrated a smaller K factor at high frequency span, indicating a larger MSG/MAG breakpoint frequency and thus a higher gain when frequency reaches MAG region of common emitter devices.
Keywords :
"Indium phosphide","III-V semiconductor materials","Indium gallium arsenide","DH-HEMTs","Fingers","Metals"
Conference_Titel :
Advanced Materials and Processes for RF and THz Applications (IMWS-AMP), 2015 IEEE MTT-S International Microwave Workshop Series on
DOI :
10.1109/IMWS-AMP.2015.7324993
