• DocumentCode
    3689804
  • Title

    Nickel silicide for interconnects

  • Author

    Kevin L. Lin;Stephanie A. Bojarski;Colin T. Carver;Manish Chandhok;Jasmeet S. Chawla;James S. Clarke;Michael Harmes;Brian Krist;Hazel Lang;Mona Mayeh;Sudipto Naskar;John J. Plombon;Seung Hoon Sung;Hui Jae Yoo

  • Author_Institution
    Components Research, Quality and Reliability
  • fYear
    2015
  • fDate
    5/1/2015 12:00:00 AM
  • Firstpage
    169
  • Lastpage
    172
  • Abstract
    Nickel silicide is an attractive option for interconnects at small dimensions because of its short electron mean free path and good electromigration behavior. Nickel silicide interconnects can be integrated using either a subtractive or damascene process. Precise control of final metal composition ratio is important for obtaining low resistivity, as shown in thin-film and patterned structure measurements.
  • Keywords
    "Nickel","Silicides","Conductivity","Microelectronics","Thermal stability","Yttrium"
  • Publisher
    ieee
  • Conference_Titel
    Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM), 2015 IEEE International
  • ISSN
    2380-632X
  • Electronic_ISBN
    2380-6338
  • Type

    conf

  • DOI
    10.1109/IITC-MAM.2015.7325612
  • Filename
    7325612
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3689804