Title :
Silicon junctionless field effect transistors as low noise THz detectors
Author :
P. Zagrajek;J. Marczewski;M. Zaborowski;M. Piszczek
Author_Institution :
Institute of Optoelectronics, Military University of Technology, Warsaw, Poland
Abstract :
This paper describes metal-oxide-semiconductor junctionless field effect transistors working as detectors of THz radiation. The exceptionally high signal to noise ratio has been achieved. These devices may operate as two terminal detectors without any gate bias.
Keywords :
"Field effect transistors","Detectors","Logic gates","Resistance","Noise measurement","Standards","Electrical resistance measurement"
Conference_Titel :
Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2015 40th International Conference on
Electronic_ISBN :
2162-2035
DOI :
10.1109/IRMMW-THz.2015.7327433
