DocumentCode
3691415
Title
Fully integrated vertical nanocontact photomixer for continuous-wave terahertz generation
Author
Shihab Al-Daffaie;Oktay Yilmazoglu;Franko Küppers;Hans Hartnagel
Author_Institution
Technische Universitä
fYear
2015
Firstpage
1
Lastpage
2
Abstract
A new type of a fully integrated vertical nanocontact THz photomixer was fabricated on LTG-GaAs/n+GaAs /SI-GaAs wafer with a single silver nanowire of ø60nm. The new vertical structure provides simple fabrication steps and better performance in terms of stability and antenna integration. The THz output power itself can be increased due to high photocurrent of ~7.5mA and small device capacitance of ~0.6 fF.
Keywords
"Capacitance","Photoconductivity","Antennas","Gallium arsenide","Fabrication","Reliability","Physics"
Publisher
ieee
Conference_Titel
Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2015 40th International Conference on
ISSN
2162-2027
Electronic_ISBN
2162-2035
Type
conf
DOI
10.1109/IRMMW-THz.2015.7327568
Filename
7327568
Link To Document