• DocumentCode
    3691561
  • Title

    InP double heterojunction bipolar transistor for detection above 1 THz

  • Author

    D. Coquillat;V. Nodjiadjim;A. Konczykowska;N. Dyakonova;C. Consejo;S. Ruffenach;F. Teppe;M. Riet;A. Muraviev;A. Gutin;M. Shur;J. Godin;W. Knap

  • Author_Institution
    Laboratoire Charles Coulomb (L2C), UMR 5221 CNRS-Univ. Montpellier, Montpellier, France
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We evaluate the optical performance of the InP heterojunction bipolar transistors (DHBTs) designed for 100 Gbit/s circuit applications as a room temperature detector operating above 1 THz. They can operate far above the frequencies at which they have gain and can still rectify THz current and voltage.
  • Keywords
    "Double heterojunction bipolar transistors","Indium phosphide","III-V semiconductor materials","Detectors","Yttrium","Wireless communication"
  • Publisher
    ieee
  • Conference_Titel
    Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2015 40th International Conference on
  • ISSN
    2162-2027
  • Electronic_ISBN
    2162-2035
  • Type

    conf

  • DOI
    10.1109/IRMMW-THz.2015.7327777
  • Filename
    7327777
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3691561