Title :
High power THz quantum cascade laser at ∼ 3.1 THz
Author :
Junqi Liu;Tao Wang;Yuanyuan Li;Fengqi Liu;Jinchuan Zhang;Shenqiang Zhai;Lijun Wang;Shuman Liu;Zhanguo Wang
Author_Institution :
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People´s Republic of China t
Abstract :
The development of quantum cascade laser at ~3.1 THz is reported. The material was designed with bound-to-continuum active region and grown by Veeco GEN-II solid source molecular beam epitaxy. Devices were processed using standard photolithography and wet chemical etching. Lasing is observed up to a heat-sink temperature of 110 K in pulsed mode with total light power above 1W at 10 K. A liquid nitrogen package is achieved.
Keywords :
"Quantum cascade lasers","Temperature measurement","Heating","Temperature","Liquids","Nitrogen","Standards"
Conference_Titel :
Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2015 40th International Conference on
Electronic_ISBN :
2162-2035
DOI :
10.1109/IRMMW-THz.2015.7327910
