Title :
The experimental results of fast switching system for millimeter wave transmission using photo-excited semiconductor
Author :
Mun Seok Choe;Kyu-Sup Lee;Nan Ei Yu;EunMi Choi
Author_Institution :
Department of Physics, Ulsan National Institute of Science and Technology (UNIST) Ulsan, 689798, Republic of Korea
Abstract :
Photo-excited semiconductor switching system for fast control of millimeter wave is developed and tested with an oversized corrugated horn (D/ λ > 10) and quasi-optical mirror setup. Semi-insulating GaAs (100) having direct band-gap shows fast switch ON-OFF (<; 100 ns) whereas semi-insulating Si (100) having indirect band-gap shows fast switch ON (<; 100 ns) and slow switch OFF (<; 1 ms) for the millimeter-wave regime.
Keywords :
"Optical switches","RF signals","Switching systems","Photonic band gap","Radiative recombination","Millimeter wave technology"
Conference_Titel :
Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2015 40th International Conference on
Electronic_ISBN :
2162-2035
DOI :
10.1109/IRMMW-THz.2015.7327945
