High-sensitivity negative-tone imaging materials using EUV exposure for sub-10 nm manufacturing — Toru Fujimori

This study describes high-sensitivity negative-tone imaging materials using EUV exposure (EUV-NTI) for sub-10 nm manufacturing. Herein, novel chemical amplified resist (CAR) materials for EUV-NTI are investigated to improve sensitivity and LWR. Results indicate that the EUV-NTI has better performance than PTD, with high sensitivity while maintaining the LWR performance. In addition, the developments of novel non-CAR materials have been just started to study for improvement of sensitivity using `metal containing non-CAR materials´. The preliminary results of novel non-CAR materials indicate ultra-high sensitivity using EB lithography will be shown.