• DocumentCode
    3694838
  • Title

    300 mm InGaAsOI substrate fabrication using the Smart CutTM technology

  • Author

    S. Sollier;J. Widiez;G. Gaudin;F. Mazen;T. Baron;M. Martin;M C. Roure;P. Besson;C. Morales;E. Beche;F. Fournel;S. Favier;A. Salaun;P. Gergaud;M. Cordeau;C. Veytizou;L. Ecarnot;D. Delprat;I. Radu;T. Signamarcheix

  • Author_Institution
    Univ. Grenoble Alpes, F-38000 Grenoble France
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this work we demonstrate for the first time 300 mm InGaAs on Insulator (InGaAs-OI) substrates. A 30 nm thick InGaAs layer was successfully transferred using low temperature Direct Wafer Bonding (DWB) and the Smart CutTM technology. The epitaxial growing process has been optimized to reduce the surface roughness of the InGaAs film at around 1.5 nm RMS. HR-XRD characterization on the transferred InGaAs layer indicates that the layer remains crystalline.
  • Keywords
    "Decision support systems","Bonding","Electron mobility","Silicon","Electron traps","Substrates","Physics"
  • Publisher
    ieee
  • Conference_Titel
    SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2015 IEEE
  • Type

    conf

  • DOI
    10.1109/S3S.2015.7333495
  • Filename
    7333495
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3694838