DocumentCode :
3694862
Title :
Preliminary steps towards implementing intimate 3D-IC stacking with layer transfer and atomic bonding methods
Author :
Michael I. Current;W. Łukaszek;Shari Farrens;T. Fong
Author_Institution :
Current Scientific, San Jose, CA
fYear :
2015
Firstpage :
1
Lastpage :
3
Abstract :
Preliminary studies of radiation damage and recovery of E2PROM sensor devices following exposure to a high-dose, 1 MeV proton beam give encouragement to the use of H-cut and layer transfer methods for vertical integration of 3D-IC´s with fully-formed CMOS devices and metal interconnect.
Keywords :
"Protons","Implants","CMOS integrated circuits","Threshold voltage","Annealing","Ionization","Particle beams"
Publisher :
ieee
Conference_Titel :
SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2015 IEEE
Type :
conf
DOI :
10.1109/S3S.2015.7333519
Filename :
7333519
Link To Document :
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