DocumentCode
3694865
Title
Quasi-static analytical model for the dynamic operation of triple-gate junctionless nanowire transistors
Author
R. Trevisoli;R. T. Doria;M. de Souza;M. A. Pavanello
Author_Institution
Electrical Engineering Department, Centro Universitá
fYear
2015
Firstpage
1
Lastpage
3
Abstract
This work presents, for the first time, an analytical and explicit model for the intrinsic transcapacitances and transconductances of triple-gate Junctionless Nanowire Transistors. The expressions are derived from a surface potential-based charge model and are validated with 3D TCAD numerical simulations.
Keywords
"Logic gates","Capacitance","Transistors","Integrated circuit modeling","Analytical models","Nanoscale devices","Semiconductor device modeling"
Publisher
ieee
Conference_Titel
SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2015 IEEE
Type
conf
DOI
10.1109/S3S.2015.7333522
Filename
7333522
Link To Document