• DocumentCode
    3694867
  • Title

    Comparative simulation study on MoS2 FET and CMOS transistor

  • Author

    Ming Zhang;Po-Yen Chien;Jason C. S. Woo

  • Author_Institution
    Department of Electrical Engineering, University of California, Los Angeles, Los Angeles, United States
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    MoS2 FET and SOI/FinFET are simulated and compared to experimental results and the impact of gate scaling-down on the transistor performance is studied. Though MoS2 FET shows better suppression of the short channel effect, its on-current is still lower than that of sSOI/FinFET down to 10nm physical channel length due to the low saturation velocity of MoS2. In addition, the improvement of mobility over 60cm2/Vs has little benefit for the on-current.
  • Keywords
    "FinFETs","Decision support systems"
  • Publisher
    ieee
  • Conference_Titel
    SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2015 IEEE
  • Type

    conf

  • DOI
    10.1109/S3S.2015.7333524
  • Filename
    7333524
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3694867