Switch branch in trap-rich RFSOI with 84 dBm off-state IP3

Third-order intermodulation intercept (IP3) of 90 dBm required for uplink carrier aggregation in LTE systems drives technology, modeling, design and characterization methods for Front-End semiconductor technology. For the first time, direct on-wafer switch branch IP3 of 84 dBm on trap-rich RF silicon on insulator (RFSOI) is demonstrated. Exploiting widely available low passive intermodulation (PIM) techniques, intermodulation distortion of switch branches and transmission lines is easily obtained to 10 Watts RF input power. On-wafer measurement system IP3 of 98 dBm gives visibility beyond harmonic distortion to the critical product level requirement of IP3.