• DocumentCode
    3694888
  • Title

    Experimental study on quantum mechanical effect for insensitivity of threshold voltage against temperature variation in strained SOI MOSFETs

  • Author

    Chang-Hoon Jeon;Byung-Hyun Lee;Byung Chul Jang;Sung-Yool Choi;Yang-Kyu Choi

  • Author_Institution
    Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, Republic of Korea
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    The temperature dependence of threshold voltage (VT) in a thin-body MOSFET, which was built on a strained silicon-on-insulator (sSOI) wafer, is examined in a temperature range of 173 K to 373 K. The insensitive temperature dependency of threshold voltage (VT) is attributed to the strain effect arisen from the sSOI, which makes the energy quantization stronger due to the lowered conductivity mass. Additionally, enhanced mobility of 770 cm2/V•sec at room temperature is achieved due to the strain effect.
  • Keywords
    "Threshold voltage","Temperature dependence","MOSFET","Temperature distribution","Strain","Logic gates","Silicon-on-insulator"
  • Publisher
    ieee
  • Conference_Titel
    SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2015 IEEE
  • Type

    conf

  • DOI
    10.1109/S3S.2015.7333545
  • Filename
    7333545
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3694888