• DocumentCode
    3695866
  • Title

    No pumping at 450°C with electrodeposited copper TSV

  • Author

    Kazuo Kondo;Shingo Mukahara;Masayuki Yokoi;Jin Onuki

  • Author_Institution
    Department of Chemical Engineering, Osaka, Prefecture University, 1-1, Gakuen-chyo, Sakai, 599-8531, Japan
  • fYear
    2015
  • Abstract
    Thermal expansion coefficient(TEC) mismatch between the silicon and copper causes serious problems in on chip and microelectronics packaging. One example is TSV pumping for the via middle process. Higher temperature exposure of 400–600°C during the wiring process causes TSV pumping. The filled copper destroys wiring above TSV.
  • Keywords
    "Additives","Copper","Annealing","Thermal expansion","Wiring","Heat pumps","Resins"
  • Publisher
    ieee
  • Conference_Titel
    3D Systems Integration Conference (3DIC), 2015 International
  • Type

    conf

  • DOI
    10.1109/3DIC.2015.7334559
  • Filename
    7334559
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3695866