Terrestrial Neutron Induced Failures in Commercial SiC Power MOSFETs at 27C and 150C

Experimental investigation of neutron induced single event failures in silicon carbide (SiC) power MOSFETs at room temperature and 150C is presented. The cross sections for failures at high temperature are presented for the first time. 1200V 36A Cree C2M0080120D SiC power MOSFETs are used for investigating neutron induced failures in silicon carbide devices, related neutron failure cross sections, as well as temperature dependency of failures. Failures were observed at all tested VDS voltages larger than 900V. At the highest rated drain bias of 1200V (and VGS=0V), empirically determined Failure In Times (FITs) are measured as high as 400 and 200,000 at sea level and military aviation level, respectively.