• DocumentCode
    3697296
  • Title

    Total Ionizing Dose Radiation Effects on 14 nm FinFET and SOI UTBB Technologies

  • Author

    Harold Hughes;Patrick McMarr;Michael Alles;Enxia Zhang;Charles Arutt;Bruce Doris;Derrick Liu;Richard Southwick;Philip Oldiges

  • Author_Institution
    Naval Res. Lab., Washington, DC, USA
  • fYear
    2015
  • fDate
    7/1/2015 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    14 nm technology node bulk silicon FinFETs and SOI FinFETs and 14 nm SOI Ultra-Thin-Body and BOX nFETs were irradiated under bias using a 10 keV X-ray source. Irradiation resulted in significant changes in the threshold voltages of the SOI devices and large changes in the off-state current of the bulk FinFETs.
  • Keywords
    "FinFETs","Radiation effects","Logic gates","Threshold voltage","Silicon","Current-voltage characteristics"
  • Publisher
    ieee
  • Conference_Titel
    Radiation Effects Data Workshop (REDW), 2015 IEEE
  • Print_ISBN
    978-1-4673-7641-9
  • Type

    conf

  • DOI
    10.1109/REDW.2015.7336740
  • Filename
    7336740
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3697296