DocumentCode :
3699792
Title :
GaAs nanostructures on Si platform
Author :
S. Sanguinetti;S. Bietti;D. Scarpellini;A. Ballabio;L. Miglio;G. Isella;L. Esposito;J. Frigerio;A. Fedorov;M. Gurioli;F. Biccari;M. Abbarchi;A. Vinattieri
Author_Institution :
L-NESS and Dipartimento di Scienza dei Materiali, Universit? di Milano Bicocca, Italy
fYear :
2015
fDate :
6/1/2015 12:00:00 AM
Firstpage :
1
Lastpage :
3
Abstract :
Effective monolithic integration strategies for high quality quantum III-V nanostructure fabrication on Si will be introduced. The methodologies presented range from ultrathin planar Ge virtual substrates for the integration of single photon emitters with high temperature stability to advanced three-dimensional Ge growths strategies.
Keywords :
"Silicon","Substrates","Gallium arsenide","Nanostructures","Photonics","Quantum dots","Fabrication"
Publisher :
ieee
Conference_Titel :
Opto-Electronics and Communications Conference (OECC), 2015
Electronic_ISBN :
2166-8892
Type :
conf
DOI :
10.1109/OECC.2015.7340229
Filename :
7340229
Link To Document :
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