Title :
A 92GHz bandwidth SiGe BiCMOS HBT TIA with less than 6dB noise figure
Author :
K. Vasilakopoulos;S. P. Voinigescu;P. Schvan;P. Chevalier;A. Cathelin
Author_Institution :
ECE Department, University of Toronto Toronto, ON M5S 3G4, Canada
Abstract :
A low-noise, broadband amplifier with resistive degeneration and transimpedance feedback is reported with 200 mVpp input linearity and less than 6 dB noise figure up to 88 GHz. The measured gain of 13 dB, noise figure, linearity, and group delay variation of ±1.5 ps are in excellent agreement with simulation. Eye diagram measurements were conducted up to 120 Gb/s and a dynamic range larger than 36 dB was obtained from eye diagram measurements at 40 Gb/s. The chip, which includes a 50Ω output buffer, occupies 0.138 mm2 and consumes 21 mA from a 2.3V supply.
Keywords :
"Heterojunction bipolar transistors","Silicon germanium","Bandwidth","Gain","Current density","BiCMOS integrated circuits","Broadband communication"
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting - BCTM, 2015 IEEE
DOI :
10.1109/BCTM.2015.7340554
