• DocumentCode
    3703775
  • Title

    A 70 GHz static dual-modulus frequency divider in SiGe BiCMOS technology

  • Author

    Arzu Ergintav;Johannes Borngr?ber;Bernd Heinemann;Holger R?cker;Frank Herzel;Dietmar Kissinger

  • Author_Institution
    IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
  • fYear
    2015
  • Firstpage
    65
  • Lastpage
    68
  • Abstract
    A 2/3 divider in a 130 nm SiGe BiCMOS technology is presented. Inductive shunt peaking was used to optimize the divider for high input frequencies. Two test circuits with and without input balun were manufactured for characterization at high and low input frequencies, respectively. The divider is functional for input frequencies up to 70 GHz and draws 20 mA from a 3.3 V supply. The circuit will enable high-performance frequency synthesizers at 120 GHz and above.
  • Keywords
    "Frequency conversion","Phase locked loops","Silicon germanium","Computer architecture","Voltage-controlled oscillators","Inductors","Impedance matching"
  • Publisher
    ieee
  • Conference_Titel
    Microwave Integrated Circuits Conference (EuMIC), 2015 10th European
  • Type

    conf

  • DOI
    10.1109/EuMIC.2015.7345069
  • Filename
    7345069
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3703775