DocumentCode :
3703793
Title :
Electrical and thermal characterization of single and multi-finger InP DHBTs
Author :
V. Midili;V. Nodjiadjim;Tom K. Johansen;M. Riet;J.Y. Dupuy;A. Konczykowska;M. Squartecchia
Author_Institution :
Department of Electrical Engineering, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
fYear :
2015
Firstpage :
148
Lastpage :
151
Abstract :
This paper presents the characterization of single and multi-finger Indium Phosphide Double Heterojunction Bipolar transistors (InP DHBTs). It is used as the starting point for technology optimization. Safe Operating Area (SOA) and small signal AC parameters are investigated along with thermal characteristics. The results are presented comparing different device dimensions and number of fingers. This work gives directions towards further optimization of geometrical parameters and reduction of thermal effects.
Keywords :
"Current measurement","Integrated circuits","Double heterojunction bipolar transistors","Thermal resistance","Temperature measurement"
Publisher :
ieee
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2015 10th European
Type :
conf
DOI :
10.1109/EuMIC.2015.7345090
Filename :
7345090
Link To Document :
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