Title :
A novel W-band bottom-LO-configured sub-harmonic mixer IC in 130-nm SiGe BiCMOS
Author :
Xin Yang;Xiao Xu;Zheng Sun;Takayuki Shibata;Toshihiko Yoshimasu
Author_Institution :
The Graduate School of Information, Production and Systems, Waseda University, 2-7 Hibikino Wakamatsu-ku, Kitakyushu-shi, Fukuoka, Japan
Abstract :
This paper presents a novel sub-harmonic mixer (SHM) IC design for W-band automotive applications in 130-nm SiGe BiCMOS technology. The SHM makes use of a Common Emitter Common Collector Transistor Pair (CECCTP) structure with bottom-LO-configuration. On-chip Marchand balun is utilized for W-band on-wafer measurement. The novel SHM exhibits a conversion gain of 3.9 dB at 80 GHz RF signal with an LO power of -7 dBm at 39.5 GHz. The mixer core consumes only 0.68 mA with a supply voltage of 3.3 V.
Keywords :
"Integrated circuits","Gain","Harmonic analysis","Mixers","Radio frequency","Silicon germanium"
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2015 10th European
DOI :
10.1109/EuMIC.2015.7345096
