• DocumentCode
    3703799
  • Title

    A novel W-band bottom-LO-configured sub-harmonic mixer IC in 130-nm SiGe BiCMOS

  • Author

    Xin Yang;Xiao Xu;Zheng Sun;Takayuki Shibata;Toshihiko Yoshimasu

  • Author_Institution
    The Graduate School of Information, Production and Systems, Waseda University, 2-7 Hibikino Wakamatsu-ku, Kitakyushu-shi, Fukuoka, Japan
  • fYear
    2015
  • Firstpage
    172
  • Lastpage
    175
  • Abstract
    This paper presents a novel sub-harmonic mixer (SHM) IC design for W-band automotive applications in 130-nm SiGe BiCMOS technology. The SHM makes use of a Common Emitter Common Collector Transistor Pair (CECCTP) structure with bottom-LO-configuration. On-chip Marchand balun is utilized for W-band on-wafer measurement. The novel SHM exhibits a conversion gain of 3.9 dB at 80 GHz RF signal with an LO power of -7 dBm at 39.5 GHz. The mixer core consumes only 0.68 mA with a supply voltage of 3.3 V.
  • Keywords
    "Integrated circuits","Gain","Harmonic analysis","Mixers","Radio frequency","Silicon germanium"
  • Publisher
    ieee
  • Conference_Titel
    Microwave Integrated Circuits Conference (EuMIC), 2015 10th European
  • Type

    conf

  • DOI
    10.1109/EuMIC.2015.7345096
  • Filename
    7345096
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3703799