• DocumentCode
    3704355
  • Title

    High gain fully on-chip LNAs with wideband input matching in 0.15-?m GaAs pHEMT for radio astronomical telescope

  • Author

    Cheng-Feng Chou;Yu-Chuan Chang;Huei Wang;Chau-Ching Chiong

  • Author_Institution
    Graduate Institute of Communication Engineering, National Taiwan University, Taipei, Taiwan, 106, R.O.C.
  • fYear
    2015
  • Firstpage
    235
  • Lastpage
    238
  • Abstract
    This paper presents two fully on-chip 0.15-μm GaAs pHEMT low-noise amplifiers (LNAs) designed in 1.6-3.1 GHz and 2.8-5.2 GHz for Square Kilometre Array (SKA) astronomical application. The LNAs using an additional parallel capacitor at the drain of the first stage achieve wideband input return loss without using a lossy series inductor at the gate of the first stage for input matching. The LNAs designed in 1.6-3.1/2.8-5.2 GHz demonstrate measured |S21| over 28.7/27.1 dB with |S11| better than -10/-8 dB and measured noise figure between 0.67-0.85/0.88-1.1 dB in the desired band, respectively.
  • Keywords
    "Noise figure","Temperature measurement","Gain","Impedance matching","Logic gates","Gallium arsenide"
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference (EuMC), 2015 European
  • Type

    conf

  • DOI
    10.1109/EuMC.2015.7345743
  • Filename
    7345743