• DocumentCode
    3706303
  • Title

    Comparison of statistical distributions of random telegraph noise (RTN) in subthreshold region and strong inversion region

  • Author

    Hitoshi Ohno;Tomoko Mizutani;Takuya Saraya;Toshiro Hiramoto

  • Author_Institution
    Institute of Industrial Science, The University of Tokyo, Japan
  • fYear
    2014
  • fDate
    6/1/2014 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Statistical distributions of amplitude (ΔId) and Vth shift (ΔVth) of random telegraph noise (RTN) are analyzed by measuring 9000 transistors at various gate voltage. It is found that, while both worst ΔId and ΔVth are larger in subthreshold region than in strong inversion, median ΔVth is larger in strong inversion. The origin is discussed in terms of the percolation effect and the screening effect.
  • Keywords
    "Logic gates","Current measurement","Statistical distributions","Transistors","Voltage measurement","Semiconductor process modeling","Fluctuations"
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop (SNW), 2014 IEEE
  • Print_ISBN
    978-1-4799-5676-0
  • Type

    conf

  • DOI
    10.1109/SNW.2014.7348541
  • Filename
    7348541
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3706303