DocumentCode :
3706382
Title :
Irradiation induced tunnel barrier in side-gated graphene nanoribbon
Author :
Shuojin Hang;Zakaria Moktadir;Hiroshi Mizuta
Author_Institution :
Faculty of Physical Sciences and Engineering, University of Southampton, UK
fYear :
2014
fDate :
6/1/2014 12:00:00 AM
Firstpage :
1
Lastpage :
2
Abstract :
We investigated a method of forming tunnel barriers in monolayer graphene nanoribbon (GNR) using controlled ion irradiation. By using a helium ion microscope (HIM), we are able to reduce the width of exposure area down to 5nm. Source-drain conductance of side-gated GNR has been measured and the gate capacitances were extracted.
Keywords :
"Graphene","Logic gates","Radiation effects","Quantum dots","Strips","Temperature measurement","Electric potential"
Publisher :
ieee
Conference_Titel :
Silicon Nanoelectronics Workshop (SNW), 2014 IEEE
Print_ISBN :
978-1-4799-5676-0
Type :
conf
DOI :
10.1109/SNW.2014.7348619
Filename :
7348619
Link To Document :
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