DocumentCode :
3708739
Title :
Comparing different switching techniques for silicon carbide MOSFET assisted silicon IGBT based hybrid switch
Author :
Sadik Ozdemir;Fatih Acar;Ugur S. Selamogullari
Author_Institution :
Department of Electrical Engineering, Yildiz Technical University, Istanbul, Turkey
fYear :
2015
Firstpage :
558
Lastpage :
561
Abstract :
This study compares different switching techniques for Silicon Carbide (SiC) MOSFET assisted Silicon (Si) IGBT based hybrid switch and presents the effect of hybrid switch control techniques on the efficiency improvement. The hybrid switch which parallels a IGBT with a SiC MOSFET is proposed as a solution to improve the light load efficiency. The hybrid switch combines desirable properties both IGBT and SiC MOSFET. Different operation modes of hybrid switch are analyzed in PSIM using a simple circuit and it is shown that the hybrid switch performs better compared to IGBT alone operation.
Keywords :
"Insulated gate bipolar transistors","Switches","MOSFET","Silicon carbide","Switching circuits","Inverters","Integrated circuit modeling"
Publisher :
ieee
Conference_Titel :
Electrical Engineering and Informatics (ICEEI), 2015 International Conference on
Print_ISBN :
978-1-4673-6778-3
Electronic_ISBN :
2155-6830
Type :
conf
DOI :
10.1109/ICEEI.2015.7352562
Filename :
7352562
Link To Document :
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