DocumentCode :
3710968
Title :
A new mc-Si degradation effect called LeTID
Author :
Friederike Kersten;Peter Engelhart;Hans-Christoph Ploigt;Andrey Stekolnikov;Thomas Lindner;Florian Stenzel;Matthias Bartzsch;Andy Szpeth;Kai Petter;Johannes Heitmann;J?rg W. M?ller
Author_Institution :
Hanwha Q CELLS GmbH, Sonnenallee 17-21, 06766 Bitterfeld-Wolfen, Germany
fYear :
2015
fDate :
6/1/2015 12:00:00 AM
Firstpage :
1
Lastpage :
5
Abstract :
A new degradation mechanism (LeTID, Light and elevated Temperature Induced Degradation) for multicrystalline solar cells is presented. The degradation reaches relative power losses of up to 10% on a time scale of several hundreds of hours of carrier injection and at field relevant temperatures. LeTID leads to a highly injection dependent lifetime characteristic after degradation and features a regeneration phase. Characteristics of LeTID as a function of temperature and injection level are presented and a comparison between laboratory and outdoor tests is drawn. LeTID is significantly reduced by adapting the cell process and processing sequence.
Keywords :
"Degradation","Silicon","Lighting","Temperature measurement","Photovoltaic cells","Temperature distribution","Passivation"
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd
Type :
conf
DOI :
10.1109/PVSC.2015.7355684
Filename :
7355684
Link To Document :
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