• DocumentCode
    3710977
  • Title

    Photocarrier recombination dynamics in Cu2ZnSn(S,Se)4 and Cu(In,Ga)Se2 studied by temperature-dependent time resolved Photoluminescence (TR-PL)

  • Author

    Mohammad Abdul Halim;Muhammad Monirul Islam; Xianjia Luo;Takeaki Sakurai;Noriyuki Sakai;Takuya Kato;Hiroki Sugimoto;Hitoshi Tampo;Hajime Shibata;Shigeru Niki;Katsuhiro Akimoto

  • Author_Institution
    Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Ibaraki, 305-8573, Japan
  • fYear
    2015
  • fDate
    6/1/2015 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Temperature dependent time resolved photoluminescence (TR-PL) measurements have been performed in similar structured kesterite Cu2ZnSn(S,Se)4 and chalcopyrite Cu(In,Ga)Se2 thin film absorbers. It is investigated that at 26 K the measured lifetime values for a set of CZTSSe samples are more than one order magnitude higher than at room temperature whereas in CIGS this difference is not significant. At room temperature the significantly lower photoluminescence emission and minority carrier lifetime for CZTSSe comparing to CIGS suggest that the dominant non-radiative recombination processes are associated with CZTSSe than CIGS and it can limit the efficiency of CZTSSe based solar cells.
  • Keywords
    "Temperature measurement","Photoluminescence","Temperature dependence","Yttrium","Photovoltaic cells"
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd
  • Type

    conf

  • DOI
    10.1109/PVSC.2015.7355693
  • Filename
    7355693
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3710977