DocumentCode :
3711073
Title :
Performance analysis of Cu(In,Ga)(Se,S)2 thin film solar cells
Author :
Tetiana Lavrenko;Kerstin Marzinzig;Thomas Walter
Author_Institution :
University of Applied Sciences Ulm, Albert - Einstein - Allee 55, 89081, Germany
fYear :
2015
fDate :
6/1/2015 12:00:00 AM
Firstpage :
1
Lastpage :
5
Abstract :
The impact of sulfur incorporation and its content in the Cu(In,Ga)(Se,S)2 layer with respect to a bandgap widening and an improvement of absorber quality has been investigated. A theoretical method to quantitatively estimate the minority carrier lifetimes based on experimental temperature dependent Voc measurements is presented. The often observed discrepancy between lifetime measurements on the bare Cu(In,Ga)(Se,S)2 films and completed devices is discussed.
Keywords :
"Sulfur","Charge carrier lifetime","Temperature measurement","Photonic band gap","Radiative recombination","Photovoltaic cells"
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd
Type :
conf
DOI :
10.1109/PVSC.2015.7355789
Filename :
7355789
Link To Document :
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