Title :
Photo-conductance properties of ultrahigh-density InAs/GaAsSb quantum dots
Author :
Naoki Akimoto;Shunsuke Uchida;Koichi Yamaguchi
Author_Institution :
The University of Electro-Communications, Chofu, Tokyo, 182-8585, Japan
fDate :
6/1/2015 12:00:00 AM
Abstract :
In-plane ultrahigh-density InAs/GaAsSb quantum dots (QDs) with a type-2 band alignment were grown on GaAs(001) substrates by molecular beam epitaxy. Photo-conductance properties of those QD samples were measured at 15 K and room temperature. At 15 K, photo-induced current due to photo-excitation of carriers between a valence band and QD levels was enhanced for a shorter light than about 1030 nm. Additional irradiation of a second excitation light of 1700-2450 nm induced two-step photo-excitation from QD levels to bands.
Keywords :
"Measurement by laser beam","Molecular beam epitaxial growth","Laser beams","Electrodes","Quantum dots","Indexes"
Conference_Titel :
Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd
DOI :
10.1109/PVSC.2015.7355815
