DocumentCode :
3711337
Title :
Measurement of metal induced recombination in solar cells
Author :
Daniel Inns;Dmitry Poplavskyy
Author_Institution :
DuPont Photovoltaic Solutions, DuPont Silicon Valley Technology Center, Sunnyvale, California, 94085, USA
fYear :
2015
fDate :
6/1/2015 12:00:00 AM
Firstpage :
1
Lastpage :
4
Abstract :
Metal induced recombination is a significant loss mechanism in standard and especially in high efficiency solar cells. It is usually measured by making solar cells with different metal contact areas, and inferring the metal induced recombination rate from the change in open circuit voltage. There are many errors which can occur if the test structure is not designed correctly - a small finger spacing should be used, with variable finger width to change the contact area.
Keywords :
"Metals","Photovoltaic cells","Thumb","Voltage measurement","Current measurement","Electrical resistance measurement"
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd
Type :
conf
DOI :
10.1109/PVSC.2015.7356056
Filename :
7356056
Link To Document :
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