Title :
Short ciruit current improvement of SiGe solar cell in a gallium arsenide phosphide - silicon germanium dual junction solar cell on Si substrate
Author :
Xin Zhao;Dun Li;Brianna Conrad;Li Wang;Anastasia H. Soeriyadi;Martin Diaz;Anthony Lochtefeld;Andrew Gerger;Ivan Perez-Wurfl;Allen Barnett
Author_Institution :
School of Photovoltaic and Renewable Energy Engineering, UNSW Australia, Sydney, 2052, Australia
fDate :
6/1/2015 12:00:00 AM
Abstract :
Light trapping capability is analyzed for the SiGe solar cell in the GaAsP-SiGe tandem device. One-dimensional model predicts an achievable Jsc of 17.46 mA/cm2 below the top cell, with the electrical parameter from quantum efficiency fitting. Experimentally, a Jsc of 15.59 mA/cm2 was achieved from the Si.18Ge.82 cell, with textured SiO2 back surface reflector and a single layer SiNx anti-reflection coating. A step-by-step path to reach the 21 mA/cm2 Jsc is provided.
Keywords :
"Silicon germanium","Silicon","Photonics","Optical device fabrication","Optical reflection","Wavelength measurement","Substrates"
Conference_Titel :
Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd
DOI :
10.1109/PVSC.2015.7356230
