DocumentCode :
3711575
Title :
Changing in irradiation behavior and temperature-coefficient variation caused by light-induced degradation of a-Si/μc-Si solar cells
Author :
Johannes A. Weicht;Frank U. Hamelmann;Grit Behrens
Author_Institution :
University of Applied Sciences Bielefeld, Artilleriestra?e 9a, 32427 Minden, Germany
fYear :
2015
fDate :
6/1/2015 12:00:00 AM
Firstpage :
1
Lastpage :
4
Abstract :
In our work we observe the light behavior before and after light-induced degradation of amorphous/microcrystalline (a-Si/μc-Si) tandem silicon-based solar cells. We show that during light-induced degradation the efficiency increases for illumination levels lower than standard test condition illumination. Additionally we examine the temperature coefficient of the open circuit voltage, short circuit current and fill factor. The temperature-coefficient of silicon-based thin film solar cells varies during the light-induced degradation.
Keywords :
"Temperature measurement","Photovoltaic cells","Degradation","Radiation effects","Temperature","Temperature dependence","Photovoltaic systems"
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd
Type :
conf
DOI :
10.1109/PVSC.2015.7356298
Filename :
7356298
Link To Document :
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