Highly conductive TCO by RF sputtering of Al:ZnO for thin film photovoltaics

Al-doped ZnO is a promising transparent conductive oxides for fabrication of opto-electronic devices. In this paper we shed lights on controlling carrier concentration and mobility of Al:ZnO by controlling deposition parameters (RF power, pressure and substrate temperature). Al:ZnO thin film with the lowest recorded resistivity of ρ=2.94E-04 Ω.cm at deposition temperature of 250°C has been achieved. Light transmission of Al:ZnO and ZnO samples deposited on glass at different substrate temperature has been studied. Additionally, investigation were made to assess the effect of deposition temperature on the photoluminescence spectra (PL) of Al:ZnO sputtered on silicon and glass substrate.