Magneto-electric magnetic tunnel junction as process adder for non-volatile memory applications

Magneto-electric magnetic tunnel junction devices (ME-MTJ) show promise for beyond-CMOS memory applications. The advantages of these devices include non-volatility, easy integration with CMOS processing, high-density, low power consumption and high-speed operation. We discuss circuitry that allows the ME-MTJ devices to interface with SRAM memory, to create non-volatile storage elements. Various layouts are suggested for the circuit configurations, showing flexible integration in an efficient manner.