Raman amplification in SOI based slow light waveguides

This paper is devoted to analyze amplification properties of silicon waveguides with an Emphasize on geometry optimization using recently derived Nonlinear Schrodinger equations. As Nonlinear Schrodinger equations are best suitable theoretical model to investigate behavior of optical wave propagating through silicon waveguides. As Raman amplification inside slow light waveguides has been demonstrated recently as key technology to enhance nonlinear effects; these waveguides deserve further investigation. Here we present the theoretical study of continuous-wave Raman amplification in slow light waveguides using recently derived generalized nonlinear Schrodinger equations. For slow light waveguides maximum signal intensity and optimal waveguide length strongly depend on geometry of the waveguide. So we observe how maximum signal intensity and optimal waveguide length varies with geometry of waveguide and find best suitable geometry to achieve maximum amount of amplification and corresponding optimal length of waveguide. This study is useful for selection of appropriate geometry and input condition in the Raman amplification based devices.