Title :
Pure-play GaN foundry technology for 50V applications
Author :
Che-Kai Lin; Fan-Hsiu Huang; Jhih-Han Du; Sheng-Wen Peng; Tung-Yao Chou; Wei-Chou Wang; Jya-Shian Wu;Richard Kuo;Clement Huang;Walter Wohlmuth; Chih-Wen Huang;Shinichiro Takatani; Wen-Kai Wang
Author_Institution :
WIN Semiconductors Corp., No. 35, Technology 7th Rd., Hwaya Technology Park, Kuei-Shan Dist., Tao-Yuan City, 333, R.O.C
Abstract :
In this paper, we present a 50V GaN HEMT technology portfolio and focuses on layout optimization, fabrication, and device modeling. A 100W PA has been demonstrated with custom heat-sink and second harmonic tuning. The newly developed 50V technology enables high power amplifier, pulsed radar, CATV, and LTE applications utilizing supply voltages of 50V for L- to C- band operational frequencies. Our pure-play GaN Foundry service supports RF MMIC and discrete device applications with comprehensive specifications and wafer acceptance tests.
Keywords :
"Transmission line measurements","Logic gates","Current measurement","HEMTs","Temperature measurement","Power measurement","Foundries"
Conference_Titel :
Microwaves, Communications, Antennas and Electronic Systems (COMCAS), 2015 IEEE International Conference on
DOI :
10.1109/COMCAS.2015.7360495
