Title :
A new dual-GCT structure with short transparent anode and corrugated p base region
Author :
Wang Cailin; Yang Jing; Gao Xiuxiu; Han Junya
Author_Institution :
Department of Electronic Engineering, Xi´an University of Technology, CHINA
Abstract :
A new dual chip GCT (Dual-GCT) structure with short transparent anode and corrugated p base region is presented based on a traditional Dual-GCT in this paper. The structural features and operation principle of the new device are analyzed, and the characteristics are studied by ISE simulator. Influences of high temperature on the characteristics are discussed. The research results that the new device has better high temperature blocking and conducting characteristics due to corrugated p base region, and better turn-off characteristics due to short transparent anode compared with the traditional Dual-GCT.
Keywords :
"Anodes","Charge carrier lifetime","Switches","Temperature","Current density","Thyristors","Transistors"
Conference_Titel :
Future Energy Electronics Conference (IFEEC), 2015 IEEE 2nd International
Print_ISBN :
978-1-4799-7655-3
DOI :
10.1109/IFEEC.2015.7361523
