• DocumentCode
    3718528
  • Title

    Dose Effects on CMOS Active Pixel Sensors

  • Author

    S. Dhombres;A. Michez;J. Boch;S. Beauvivre;J. -R. Vaille;A. D. Touboul;P. C. Adell;F. Bezerra;E. Lorfevre;D. Kraehenbuehl;F. Saigne

  • Author_Institution
    IES - UMR UM2, Univ. Montpellier, Montpellier, France
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    A thermal annealing approach is applied on irradiated CMOS active pixel sensors to investigate total dose effects and improve device lifetime. Results are discussed and help identified the sensor´s sensitive areas.
  • Keywords
    "Annealing","CMOS integrated circuits","Radiation effects","Degradation","Dark current","Heating","Active pixel sensors"
  • Publisher
    ieee
  • Conference_Titel
    Radiation and Its Effects on Components and Systems (RADECS), 2015 15th European Conference on
  • Print_ISBN
    978-1-5090-0232-0
  • Type

    conf

  • DOI
    10.1109/RADECS.2015.7365603
  • Filename
    7365603
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3718528