Title :
Nonuniform Optical Losses in Laser SEE Tests
Author :
Dmitry V. Savchenkov;Alexander I. Chumakov;Oleg V. Merkushin;Georgy G. Davydov;Vladimir A. Marfin
Author_Institution :
Specialized Electron. Syst., Nat. Res. Nucl. Univ., Moscow, Russia
Abstract :
Lasers can be used in combination with ions for SEE testing. The most practical technique of such tests is based on the comparison between the SEE cross-section vs. ion LET and the SEE cross-section vs. laser pulse energy. However there can be a significant error in the latter curve since the effective laser energy is not the same over different locations on the chip due to the IC´s metallization nonuniformity. This nonuniformity can be taken into account through the optical beam induced current (OBIC) examination which is considered in this article.
Keywords :
"CMOS integrated circuits","Testing","Random access memory","Microprocessors","Ionization","Optical losses","Radiation effects"
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2015 15th European Conference on
Print_ISBN :
978-1-5090-0232-0
DOI :
10.1109/RADECS.2015.7365642
