DocumentCode
3720877
Title
Modeling of Schottky barrier diode millimeter-wave multipliers at cryogenic temperatures
Author
Tom K. Johansen;Oleksandr Rybalko;Vitaliy Zhurbenko;Sean Bowen;Jeffrey Hesler;Jan H. Ardenkjaer-Larsen
Author_Institution
Department of Electrical Engineering, Technical University of Denmark, Kgs. Lyngby, Denmark
fYear
2015
Firstpage
1
Lastpage
4
Abstract
We report on the evaluation of Schottky barrier diode GaAs multipliers at cryogenic temperatures. A GaAs Schottky barrier diode model is developed for theoretical estimation of doubler performance. The model is used to predict efficiency of doublers from room to cryogenic temperatures. The theoretical estimation is verified experimentally using a 78 GHz doubler cooled down to 14 K. The observed efficiency improvement due to cooling is approximately 4 % per 100 degrees.
Keywords
"Schottky diodes","Temperature","Schottky barriers","Solid modeling","Cryogenics"
Publisher
ieee
Conference_Titel
Microwave and Optoelectronics Conference (IMOC), 2015 SBMO/IEEE MTT-S International
Type
conf
DOI
10.1109/IMOC.2015.7369088
Filename
7369088
Link To Document