2-Phase 2-stage capacitor-less gate driver for Gallium Nitride Gate Injection Transistor for reduced gate ringing

Increasingly stringent requirements for higher power density and efficiency have driven development for lower on-resistance (Ron) and gate charge (Qg) power transistors. Gallium Nitride (GaN) and Silicon Carbide (SiC) are good contenders for replacing conventional Si power transistors. This work attempts to develop a driver IC to fulfil specific needs of Gallium Nitride Gate Injection Transistor (GIT), which is a non-insulated gate enhancement mode GaN power transistor. In order to supply a forward gate current, a two stage driver is a strong contender to resolve this issue. The application of GaN GITs typically target applications where the slew rates are required to be high. High slew rate results in ringing and current clamping at the gate. This project proposes a 2-phase circuit to reduce the gate ringing. Simulation is conducted to verify the design and the proposed design demonstrates reduction in gate ringing.