• DocumentCode
    3721110
  • Title

    A SiC 8 Bit DAC at 400?C

  • Author

    A. Rahman;S. Roy;R. C. Murphree;H. A. Mantooth;A. M. Francis;J. Holmes

  • Author_Institution
    Department of Electrical Engineering, University of Arkansas Fayetteville, AR 72701, USA
  • fYear
    2015
  • Firstpage
    241
  • Lastpage
    246
  • Abstract
    This paper presents the first operational digital to analog converter at 400°C. The 8 bit R-2R ladder DAC was designed in the Raytheon 1.2 μm CMOS HiTSiC process. The data converter is also the first of its kind in SiC. It has been tested with a supply voltage between 12 V and 15 V, and reference voltages of 5 V to 8 V. At 400°C, the maximum measured differential non linearity (DNL) is 2 LSB (least significant bit) and the integral non linearity is 4.4 LSB.
  • Keywords
    "Silicon carbide","Temperature measurement","Integrated circuits","Voltage measurement","Digital-analog conversion","Switches","Breakdown voltage"
  • Publisher
    ieee
  • Conference_Titel
    Wide Bandgap Power Devices and Applications (WiPDA), 2015 IEEE 3rd Workshop on
  • Type

    conf

  • DOI
    10.1109/WiPDA.2015.7369325
  • Filename
    7369325
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3721110