• DocumentCode
    3722010
  • Title

    Low temperature, 400 °C, pure boron deposition: A solution for integration of high-performance Si photodetectors and CMOS circuits

  • Author

    V. Mohammadi;S. Nihtianov

  • Author_Institution
    Department of Microelectronics, Delft University of Technology, Delft, The Netherlands
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    A novel technology for low temperature (LT, 400°C) boron deposition is presented providing a uniform, smooth, and closed boron layer. The temperature dependency of the boron deposition is discussed. Some provisions are recommended to minimize the undesirable boron deposition on oxide surfaces. This technology is successfully employed to create near-ideal LT PureB photodiodes with low, deep-junction-like saturation currents.
  • Keywords
    "Boron","Surface treatment","Photodiodes","Silicon","Rough surfaces","Surface roughness","Hydrogen"
  • Publisher
    ieee
  • Conference_Titel
    SENSORS, 2015 IEEE
  • Type

    conf

  • DOI
    10.1109/ICSENS.2015.7370555
  • Filename
    7370555
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3722010