Low temperature, 400 °C, pure boron deposition: A solution for integration of high-performance Si photodetectors and CMOS circuits

A novel technology for low temperature (LT, 400°C) boron deposition is presented providing a uniform, smooth, and closed boron layer. The temperature dependency of the boron deposition is discussed. Some provisions are recommended to minimize the undesirable boron deposition on oxide surfaces. This technology is successfully employed to create near-ideal LT PureB photodiodes with low, deep-junction-like saturation currents.